共 50 条
- [32] Effect of p-dopant positioning in low-threshold, InGaAs/GaAs/AlGaAs, MQW GRINSCH lasers with GaAs etch-stop layer for multi-wavelength applications FABRICATION, TESTING, AND RELIABILITY OF SEMICONDUCTOR LASERS, 1996, 2683 : 8 - 17
- [36] High-speed partial-depleted-absorber photodiode based on GaAs/AlGaAs at 850nm wavelength 2020 ASIA COMMUNICATIONS AND PHOTONICS CONFERENCE (ACP) AND INTERNATIONAL CONFERENCE ON INFORMATION PHOTONICS AND OPTICAL COMMUNICATIONS (IPOC), 2020,
- [40] P-DOPANT INCORPORATION AND INFLUENCE ON GAIN AND DAMPING BEHAVIOR IN HIGH-SPEED GAAS-BASED STRAINED MQW LASERS MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1993, 21 (2-3): : 232 - 236