THE CALCULATION OF ENERGY DIAGRAM OF GRADED BAND-GAP SEMICONDUCTORS BY AN ASYMPTOTIC METHOD

An asymptotic expansion of electrostatic potential for the case of graded band gap semiconductors whose width is much greater than Debye's screening length is obtained by the boundary functions method. It is shown that the coordinate profile of electrostatic potential in thin boundary regions with space sharge is determined by the exponential boundary functions. The peculiarities of energy diagram of intrinsic and uniformly doped graded band gap semiconductors are considered.