INGAAS-GAAS-INGAP DISTRIBUTED-FEEDBACK BURIED HETEROSTRUCTURE STRAINED-QUANTUM-WELL LASERS FOR HIGH-POWER OPERATION AT 0.98-MU-M

被引：2
|
作者：
SIN, YK
HORIKAWA, H
KAMIJOH, T
机构：
[1] Semiconductor Technology Laboratory, OkiElectric Industry Company Ltd.
来源：
IEEE PHOTONICS TECHNOLOGY LETTERS | 1993年 / 5卷 / 09期
关键词：
Crystal structure - High power lasers - Morphology - Semiconductor lasers - Semiconductor quantum wells;
D O I：
10.1109/68.257160
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Data are presented on device results from InGaAs-GaAs distributed feedback buried heterostructure (DFB BH) strained-quantum-well lasers with InGaP cladding layers. DFB BH lasers with a p-n InGaP current blocking junction entirely grown by a three-step MOVPE on GaAs substrates show a low laser threshold of 3.2 mA and a high output power of 41 mW with single-longitudinal-mode operation, both measured CW at RT. The monomode oscillation is obtained even at the injection current of 140 mA (44 times the laser threshold) with the side-mode suppression ratio of 35 dB and the temperature sensitivity of Bragg modes being 0.5 angstrom/degrees-C measured between 20 and 40-degrees-C.
引用
收藏
页码：966 / 968
页数：3
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