MICROSTRUCTURAL EFFECTS ON MINORITY-CARRIER DIFFUSION LENGTH IN EPITAXIAL GAAS

被引：16

|

作者：

ABRAHAMS, MS

BUIOCCHI, CJ

WILLIAMS, BF

机构：

来源：

APPLIED PHYSICS LETTERS | 1971年 / 18卷 / 06期

关键词：

D O I：

10.1063/1.1653637

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：220 / &

相关论文

共 50 条

[31] CONCENTRATION-DEPENDENCE OF MINORITY-CARRIER DIFFUSION LENGTH AND LIFETIME IN GAP
YOUNG, ML
WIGHT, DR
JOURNAL OF PHYSICS F-METAL PHYSICS, 1974, 7 (13): : 1824 - 1837
[32] DETERMINATION OF THE MINORITY-CARRIER DIFFUSION LENGTH IN SILICON SOLAR-CELLS
VASEASHTA, AK
ARORA, JD
MATHUR, PC
INTERNATIONAL JOURNAL OF ELECTRONICS, 1979, 46 (05) : 529 - 533
[33] MEASUREMENT OF DIFFUSION LENGTH OF MINORITY-CARRIER IN SI CRYSTAL BY PHOTOLUMINESCENCE TOMOGRAPHY
MORIYA, K
DEFECT RECOGNITION AND IMAGE PROCESSING IN SEMICONDUCTORS AND DEVICES, 1994, (135): : 131 - 134
[34] MEASUREMENTS OF MINORITY-CARRIER DIFFUSION LENGTH IN HETEROJUNCTION SOLAR-CELLS
TARRICONE, L
GOMBIA, E
SOLAR ENERGY MATERIALS, 1979, 2 (01): : 45 - 52
[35] MEASUREMENT OF THE MINORITY-CARRIER DIFFUSION LENGTH IN THIN SEMICONDUCTOR-FILMS
CHIANG, CL
SCHWARZ, R
SLOBODIN, DE
KOLODZEY, J
WAGNER, S
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1986, 33 (10) : 1587 - 1592
[36] MAPPING OF THE LOCAL MINORITY-CARRIER DIFFUSION LENGTH IN SILICON-WAFERS
STEMMER, M
APPLIED SURFACE SCIENCE, 1993, 63 (1-4) : 213 - 217
[37] MEASUREMENT OF MINORITY-CARRIER DIFFUSION LENGTH IN POLYCRYSTALLINE SOLAR-CELLS
SOPORI, BL
LEGGE, RN
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (03) : C111 - C111
[38] MEASUREMENT OF MINORITY-CARRIER DIFFUSION LENGTH IN SEMICONDUCTORS USING A COMPUTERIZED FACILITY
GERMANOVA, K
NIKOLOV, L
KHARDALOV, C
TSVETKOV, T
INSTRUMENTS AND EXPERIMENTAL TECHNIQUES, 1994, 37 (02) : 224 - 227
[39] CHANGE OF MINORITY-CARRIER DIFFUSION LENGTH IN POLYCRYSTALLINE SILICON BY ULTRASOUND TREATMENT
OSTAPENKO, S
JASTRZEBSKI, L
SOPORI, B
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1995, 10 (11) : 1494 - 1500
[40] IMPACT OF BULK DEFECT ON MINORITY-CARRIER DIFFUSION LENGTH AND DEVICE LEAKAGE
FUNG, MS
VERKUIL, RL
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (03) : C96 - C96

← 1 2 3 4 5 →