CATHODOLUMINESCENCE OF SILICON-CARBIDE

被引:1
|
作者
SODOMKA, L
机构
关键词
D O I
10.1007/BF01591044
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
引用
收藏
页码:233 / 236
页数:4
相关论文
共 50 条
  • [41] EFFECTIVE SINTERING AIDS FOR SILICON-CARBIDE CERAMICS - REACTIVITIES OF SILICON-CARBIDE WITH VARIOUS ADDITIVES
    NEGITA, K
    JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 1986, 69 (12) : C308 - C310
  • [42] Doping in cubic silicon-carbide
    Gubanov, VA
    Fong, CY
    APPLIED PHYSICS LETTERS, 1999, 75 (01) : 88 - 90
  • [43] WHATEVER HAPPENED TO SILICON-CARBIDE
    CAMPBELL, RB
    IEEE TRANSACTIONS ON INDUSTRIAL ELECTRONICS, 1982, 29 (02) : 124 - 128
  • [44] DEVELOPMENT OF SILICON-CARBIDE COMPOSITES
    FITZER, E
    FRITZ, W
    GADOW, R
    CHEMIE INGENIEUR TECHNIK, 1985, 57 (09) : 737 - 746
  • [45] ELECTROPHORETIC DEPOSITION OF SILICON-CARBIDE
    MAHAPATRA, AKS
    DHANANJAYAN, N
    TRANSACTIONS OF THE INDIAN INSTITUTE OF METALS, 1981, 34 (06): : 495 - 500
  • [46] THE CREEP OF SILICON-CARBIDE FIBERS
    SIMON, G
    BUNSELL, AR
    JOURNAL OF MATERIALS SCIENCE LETTERS, 1983, 2 (02) : 80 - 82
  • [47] MUONIUM STATES IN SILICON-CARBIDE
    PATTERSON, BD
    BAUMELER, H
    KELLER, H
    KIEFL, RF
    KUNDIG, W
    ODERMATT, W
    SCHNEIDER, JW
    CHOYKE, WJ
    ESTLE, TL
    SPENCER, DP
    BLAZEY, KW
    SAVIC, IM
    HYPERFINE INTERACTIONS, 1986, 32 (1-4): : 625 - 630
  • [48] PROPERTIES OF SILICON-CARBIDE FIBER
    ISHIKAWA, T
    TERANISHI, H
    ICHIKAWA, H
    CARBON, 1984, 22 (02) : 239 - 239
  • [49] THE LIMIT OF NONSTOICHIOMETRY IN SILICON-CARBIDE
    BIRNIE, DP
    KINGERY, WD
    JOURNAL OF MATERIALS SCIENCE, 1990, 25 (06) : 2827 - 2834
  • [50] Silicon-carbide nanostructures to nanotubes
    Huda, M. N.
    Kleinman, Leonard
    Ray, Asok K.
    JOURNAL OF COMPUTATIONAL AND THEORETICAL NANOSCIENCE, 2007, 4 (04) : 739 - 744