Characteristics and analysis of 4H-SiC PiN diodes with a carbon-implanted drift layer

被引：0

作者：

Feng Jiangmei ^{[1
,2
]}

Shen Huajun ^{[2
]}

Ma Xiaohua ^{[1
]}

Bai Yun ^{[2
]}

Wu Jia ^{[3
]}

Li Chengzhan ^{[3
]}

Liu Kean ^{[3
]}

Liu Xinyu ^{[2
]}

机构：

[1] Xidian Univ, Sch Adv Mat & Nanotechnol, Key Lab Wide Band Gap Semicond Mat & Devices, Xian 710071, Peoples R China

[2] Chinese Acad Sci, Inst Microelect, Key Lab Microelect Devices & Integrated Technol, Beijing 100029, Peoples R China

[3] Zhuzhou CSR Times Elect Co Ltd, Zhuzhou 412001, Peoples R China

来源：

JOURNAL OF SEMICONDUCTORS | 2016年 / 37卷 / 04期

关键词：

4H-SiC; carbon-implanted drift layer; PiN diodes; Z(1/2) defects;

D O I：

10.1088/1674-4926/37/4/044009

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The characteristics of 4H-SiC PiN diodes with a carbon-implanted drift layer was investigated and the reason of characteristics improvement was analyzed. The forward voltage drops of the diodes with carbon-implanted drift layer were around 3.3 V, which is lower than that of devices without carbon implantation, the specific-on resistance was decreased from 9.35 to 4.38 m Omega.cm(2) at 100 A/cm(2), and the reverse leakage current was also decreased. The influence of carbon incorporation in the SiC crystalline grids was studied by using deep-level transient spectroscopy (DLTS). The DLTS spectra revealed that the Z(1/2) traps, which were regarded as the main lifetime limiting defects, were dramatically reduced. It is proposed that the reduction of Z(1/2) traps can achieve longer carrier lifetime in the drift layer, which is beneficial to the performance of bipolar devices.

引用

页数：5

共 50 条

[21] Evaluation of termination techniques for 4H-SiC PiN diodes
Mihaila, A. P.
Udrea, F.
Rashid, S. J.
Amaratunga, G. A. J.
Kataoka, M.
Takeuchi, Y.
Malhan, R. K.
SILICON CARBIDE AND RELATED MATERIALS 2006, 2007, 556-557 : 925 - +
[22] Drift-free 10-kV, 20-A 4H-SiC PiN diodes
Hull, BA
Das, MK
Sumakeris, JJ
Richmond, JT
Krishnaswami, S
JOURNAL OF ELECTRONIC MATERIALS, 2005, 34 (04) : 341 - 344
[23] Drift-free 10-kV, 20-A 4H-SiC PiN diodes
Brett A. Hull
Mrinal K. Das
Joseph J. Sumakeris
James T. Richmond
Sumi Krishnaswami
Journal of Electronic Materials, 2005, 34 : 341 - 344
[24] Characteristics of a 4H-SiC Pin Diode With Carbon Implantation/Thermal Oxidation
Nakayama, Koji
Tanaka, Atsushi
Nishimura, Masahiko
Asano, Katsunori
Miyazawa, Tetsuya
Ito, Masahiko
Tsuchida, Hidekazu
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2012, 59 (04) : 895 - 901
[25] Partial dislocations and stacking faults in 4H-SiC PiN diodes
M. E. Twigg
R. E. Stahlbush
M. Fatemi
S. D. Arthur
J. B. Fedison
J. B. Tucker
S. Wang
Journal of Electronic Materials, 2004, 33 : 472 - 476
[26] Partial dislocations and stacking faults in 4H-SiC PiN diodes
Twigg, ME
Stahlbush, RE
Fatemi, M
Arthur, SD
Fedison, JB
Tucker, JB
Wang, S
JOURNAL OF ELECTRONIC MATERIALS, 2004, 33 (05) : 472 - 476
[27] Physical Modelling of Large Area 4H-SiC PiN Diodes
Bryant, A. T.
Jennings, M. R.
Parker-Allotey, N-A.
Mawby, P. A.
Perez-Tomas, A.
Brosselard, P.
Godignon, P.
Jorda, X.
Milian, J.
Palmer, P. R.
Santi, E.
Hudgins, J. L.
2009 IEEE ENERGY CONVERSION CONGRESS AND EXPOSITION, VOLS 1-6, 2009, : 494 - +
[28] Current transport mechanisms in 4H-SiC pin diodes.
Camara, N
Bano, E
Zekentes, K
SILICON CARBIDE AND RELATED MATERIALS 2003, PTS 1 AND 2, 2004, 457-460 : 1017 - 1020
[29] Drift-free, 50 A, 10 kV 4H-SiC PiN diodes with improved device yields
Das, MK
Sumakeris, JJ
Hull, BA
Richmond, J
Krishnaswami, S
Powell, AR
SILICON CARBIDE AND RELATED MATERIALS 2004, 2005, 483 : 965 - 968
[30] Structural defects in electrically degraded 4H-SiC PiN diodes
Persson, POÅ
Jacobson, H
Molina-Aldareguia, JM
Bergman, JP
Tuomi, T
Clegg, WJ
Janzén, E
Hultman, L
SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGS, 2002, 389-3 : 423 - 426

← 1 2 3 4 5 →