Chemical treatment of monocrystalline cadmium telluride and Cd1-xMnxTe solid solutions by H2O2-HI-citric acid etchant compositions

被引：0

作者：

Denysyuk, R. O. ^{[1
]}

Tomashik, V. M. ^{[2
]}

Tomashik, Z. F. ^{[2
]}

Chernyuk, O. S. ^{[1
]}

Grytsiv, V. I. ^{[1
]}

机构：

[1] Ivan Franko Zhytomyr State Univ, 40 V Berdychivska Str, UA-10001 Zhytomyr, Ukraine

[2] NAS Ukraine, V Lashkaryov Inst Semicond Phys, UA-03028 Kiev, Ukraine

来源：

SEMICONDUCTOR PHYSICS QUANTUM ELECTRONICS & OPTOELECTRONICS | 2009年 / 12卷 / 02期

关键词：

cadmium telluride; chemical dissolution; citric acid; semiconductor; etching rate; solid solution;

D O I：

暂无

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Dissolution of CdTe and Cd1-xMnxTe single crystals in aqueous solutions of H2O2-HI-citric acid system has been studied. The surfaces of equal etching rates were constructed and the limiting stages of the dissolution process were ascertained. Also determined were the concentration limits for the solutions that can be used for chemical polishing the above-mentioned semiconductor materials.

引用

页数：4

共 31 条

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