VAPOR-GROWN 1.3 MU-M INGAASP-INP AVALANCHE PHOTO-DIODES

被引：30

|

作者：

OLSEN, GH

KRESSEL, H

机构：

来源：

ELECTRONICS LETTERS | 1979年 / 15卷 / 05期

关键词：

D O I：

10.1049/el:19790100

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：141 / 142

页数：2

相关论文

共 50 条

[31] VAPOR-PHASE GROWTH OF 1.3-MU-M INGAASP-INP HETEROJUNCTION LASERS, LEDS, AND APDS
OLSEN, GH
ETTENBERG, M
NUESE, CJ
KRESSEL, H
BOTEZ, D
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (11) : 1843 - 1843
[32] HIGH RADIANCE INGAASP-INP LENSED LEDS FOR OPTICAL COMMUNICATION-SYSTEMS AT 1.2-1.3 MU-M
WADA, O
YAMAKOSHI, S
ABE, M
NISHITANI, Y
SAKURAI, T
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1981, 17 (02) : 174 - 178
[33] OPTICAL MODULE BASED ON QUANTUM-DIMENTIONAL INGAASP-INP LASER OF (LAMBDA=1.3 MU-M) WATT RANGE
BERISHEV, IE
GARBUZOV, DZ
GONCHAROV, SE
ILIN, YV
MIKHAILOV, AV
OVCHINNIKOV, AV
PIKHTIN, NA
RAFAILOV, EU
TARASOV, IS
PISMA V ZHURNAL TEKHNICHESKOI FIZIKI, 1990, 16 (21): : 35 - 41
[34] INP-INGAASP PLANAR AVALANCHE PHOTO-DIODES WITH SELF-GUARD-RING EFFECT
TAGUCHI, K
MATSUMOTO, Y
NISHIDA, K
ELECTRONICS LETTERS, 1979, 15 (15) : 453 - 455
[35] NOISE PERFORMANCE OF 1.3 MU-M INGAASP AVALANCHE PHOTO-DIODE AT -190-DEGREES-C
TAKANASHI, Y
HORIKOSHI, Y
JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (03) : L163 - L166
[36] MULTIPLICATION NOISE IN (111)INP AVALANCHE PHOTO-DIODES
OSAKA, F
KANEDA, T
FUJITSU, KN
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (10) : 1670 - 1671
[37] CHARACTERIZATION OF LOSS MECHANISM IN 1.3 MU-M INGAASP INP LASER-DIODES BY ACOUSTICAL AND OPTICAL MEASUREMENTS
YAMANISHI, M
SUEMUNE, I
NONOMURA, K
MIKOSHIBA, N
JAPANESE JOURNAL OF APPLIED PHYSICS, 1982, 21 (01) : 365 - 370
[38] 1.5 MU-M INGAASP-INP DH LASER WITH OPTICAL-WAVEGUIDE STRUCTURE
KOBAYASHI, N
HORIKOSHI, Y
JAPANESE JOURNAL OF APPLIED PHYSICS, 1979, 18 (05) : 1005 - 1006
[39] HIGH-PERFORMANCE LAMBDA= 1.3 MU-M INGAASP-INP STRAINED-LAYER QUANTUM-WELL LASERS
THIJS, PJA
VANDONGEN, T
TIEMEIJER, LF
BINSMA, JJM
JOURNAL OF LIGHTWAVE TECHNOLOGY, 1994, 12 (01) : 28 - 37
[40] CHANNELED SUBSTRATE BURIED HETEROSTRUCTURE INGAASP-INP LASER EMITTING AT 1.55 MU-M
TAKAHASHI, S
SAITO, H
IWANE, G
ELECTRONICS LETTERS, 1980, 16 (24) : 922 - 923

← 1 2 3 4 5 →