VAPOR-GROWN 1.3 MU-M INGAASP-INP AVALANCHE PHOTO-DIODES

被引：30

|

作者：

OLSEN, GH

KRESSEL, H

机构：

来源：

ELECTRONICS LETTERS | 1979年 / 15卷 / 05期

关键词：

D O I：

10.1049/el:19790100

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：141 / 142

页数：2

相关论文

共 50 条

[1] 1.3 MU-M INP-INGAASP PLANAR AVALANCHE PHOTO-DIODES
SHIRAI, T
OSAKA, F
YAMASAKI, S
NAKAJIMA, K
KANEDA, T
ELECTRONICS LETTERS, 1981, 17 (22) : 826 - 827
[2] TEMPERATURE-DEPENDENCE OF IONIZATION COEFFICIENTS FOR INP AND 1.3-MU-M INGAASP AVALANCHE PHOTO-DIODES
TAKANASHI, Y
HORIKOSHI, Y
JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (10) : 1907 - 1913
[3] INGAASP-INP DOUBLE-HETEROSTRUCTURE PHOTO-DIODES
SAKAI, S
UMENO, M
AMEMIYA, Y
JAPANESE JOURNAL OF APPLIED PHYSICS, 1978, 17 (09) : 1701 - 1702
[4] INGAASP-INP PHOTO-DIODES - MICRO-PLASMA-LIMITED AVALANCHE MULTIPLICATION AT 1-1.3-MUM WAVELENGTH
LEE, TP
BURRUS, CA
DENTAI, AG
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1979, 15 (01) : 30 - 35
[5] NEW WAVELENGTH-DEMULTIPLEXING INGAASP-INP PHOTO-DIODES
TOBE, M
SAKAI, S
UMENO, M
AMEMIYA, Y
JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 : 213 - 216
[6] INGAASP AVALANCHE PHOTO-DIODES
YEATS, R
CHIAO, SH
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (11) : 1844 - 1845
[7] GERMANIUM AVALANCHE PHOTO-DIODES IN THE 1.3-MU-M WAVELENGTH REGION
KAGAWA, S
MIKAWA, T
KANEDA, T
FUJITSU SCIENTIFIC & TECHNICAL JOURNAL, 1982, 18 (03): : 397 - 418
[8] INTERNAL LOSS OF INGAASP-INP BURIED CRESCENT (LAMDA = 1.3 MU-M) LASER
HIGUCHI, H
NAMIZAKI, H
OOMURA, E
HIRANO, R
SAKAKIBARA, Y
SUSAKI, W
FUJIKAWA, K
APPLIED PHYSICS LETTERS, 1982, 41 (04) : 320 - 321
[9] A 1.3 MU-M INGAASP/INP MULTIQUANTUM WELL LASER GROWN BY LPE
SASAI, Y
HASE, N
KAJIWARA, T
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1985, 24 (02): : L137 - L139
[10] MULTIPLICATION NOISE IN PLANAR INP INGAASP HETEROSTRUCTURE AVALANCHE PHOTO-DIODES
SHIRAI, T
YAMASAKI, S
OSAKA, F
NAKAJIMA, K
KANEDA, T
APPLIED PHYSICS LETTERS, 1982, 40 (06) : 532 - 533

← 1 2 3 4 5 →