共 50 条
- [25] ROLE OF POINT-DEFECTS IN GROWTH OF OXIDATION-INDUCED STACKING-FAULTS IN SILICON PHYSICAL REVIEW B, 1977, 16 (06): : 2849 - 2857
- [26] REFLECTION X-RAY TOPOGRAPHY OF OXIDATION-INDUCED STACKING-FAULTS IN SILICON PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1977, 42 (02): : K91 - &
- [27] OPTICAL CHARACTERIZATION OF DEEP STATES ASSOCIATED WITH OXIDATION-INDUCED STACKING-FAULTS IN SILICON MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1994, 24 (1-3): : 170 - 174
- [30] LIGHT-BEAM-INDUCED TRANSIENT SPECTROSCOPY OF OXIDATION-INDUCED STACKING-FAULTS IN SILICON MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1994, 24 (1-3): : 167 - 169