INFLUENCE OF TRICHLOROETHYLENE ON SUPPRESSION OF OXIDATION-INDUCED STACKING-FAULTS IN SILICON WAFERS

被引：7

|

作者：

HATTORI, T

机构：

来源：

DENKI KAGAKU | 1978年 / 46卷 / 02期

关键词：

D O I：

10.5796/kogyobutsurikagaku.46.122

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

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页码：122 / 127

页数：6

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[1] SOURCES OF OXIDATION-INDUCED STACKING-FAULTS IN CZOCHRALSKI SILICON WAFERS
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[4] DENSITY OF OXIDATION-INDUCED STACKING-FAULTS IN DAMAGED SILICON
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[8] INFLUENCE OF ANNEALING AMBIENT ON THE SHRINKAGE KINETICS OF OXIDATION-INDUCED STACKING-FAULTS IN SILICON
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[9] ELIMINATION OF STACKING-FAULTS IN SILICON BY TRICHLOROETHYLENE OXIDATION
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[10] INFLUENCE OF PHOSPHORUS DIFFUSION ON GROWTH KINETICS OF OXIDATION-INDUCED STACKING-FAULTS IN SILICON
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