SINGLE-CRYSTAL GALLIUM ARSENIDE ON INSULATING SUBSTRATES

被引：334

|

作者：

MANASEVIT, HM

机构：

来源：

APPLIED PHYSICS LETTERS | 1968年 / 12卷 / 04期

关键词：

D O I：

10.1063/1.1651934

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：156 / +

页数：1

相关论文

共 50 条

[41] THIN INSULATING SINGLE-CRYSTAL FILMS OF LAYER CHALCOGENIDES
ABDULLAEV, GB
ABDULLAEV, AG
ALIEV, VK
AKSYANOV, IG
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1980, 62 (02): : K119 - &
[42] EPITAXIAL GROWTH OF BULK-QUALITY GALLIUM ARSENIDE ON GALLIUM ARSENIDE AND GERMANIUM SUBSTRATES
BOBB, LC
HOLLOWAY, H
MAXWELL, KH
JOURNAL OF APPLIED PHYSICS, 1966, 37 (10) : 3909 - &
[43] SEMI-INSULATING GALLIUM-ARSENIDE SUBSTRATES FOR HIGH-FREQUENCY FET AND IC FABRICATION
WINSTON, H
SOLID STATE TECHNOLOGY, 1983, 26 (01) : 145 - 150
[44] MICROSCOPY OF SEMI-INSULATING GALLIUM-ARSENIDE
AUGUSTUS, PD
STIRLAND, DJ
JOURNAL OF MICROSCOPY, 1980, 118 (JAN) : 111 - 116
[45] IMPURITY CATHODOLUMINESCENCE OF SEMI-INSULATING GALLIUM ARSENIDE
DOMANEVSKII, DS
TKACHEV, VD
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1971, 4 (11): : 1790 - +
[46] Dielectric spectroscopy of semi-insulating gallium arsenide
Jonscher, AK
Pickup, C
Zaidi, SH
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1986, 1 (01) : 71 - 92
[47] EPITAXIAL GROWTH OF SEMI-INSULATING GALLIUM ARSENIDE
MIZUNO, O
KIKUCHI, S
SEKI, Y
JAPANESE JOURNAL OF APPLIED PHYSICS, 1971, 10 (02) : 208 - +
[48] SINGLE-CRYSTAL GROWTH AND PHASE STUDIES IN YTTERBIUM ARSENIDE SYSTEM
KHAN, A
CASTRO, J
ACTA CIENTIFICA VENEZOLANA, 1973, 24 : 68 - 68
[49] REALIZATION OF THE WEAK ABSORPTION CONDITION DURING LAUE DIFFRACTION OF X-RADIATION IN SINGLE-CRYSTAL GALLIUM-ARSENIDE
KISLOVSKII, EN
KHRUPA, VI
INDUSTRIAL LABORATORY, 1989, 55 (12): : 1406 - 1408
[50] Hydroxylapatite growth on single-crystal rutile substrates
Lindberg, Fredrik
Heinrichs, Jannica
Ericson, Fredric
Thomsen, Peter
Engqvist, Hakan
BIOMATERIALS, 2008, 29 (23) : 3317 - 3323

← 1 2 3 4 5 →