REACTION OF SI2H6 MOLECULE ON A SILICON SURFACE

被引：7
|
作者：
OHSHITA, Y [1 ]
UESUGI, F [1 ]
NISHIYAMA, I [1 ]
机构：
[1] NEC CORP LTD,OPTOELECTR RES LABS,TSUKUBA,IBARAKI 305,JAPAN
来源：
JOURNAL OF CRYSTAL GROWTH | 1991年 / 115卷 / 1-4期
关键词：
D O I：
10.1016/0022-0248(91)90803-D
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
The disilane (Si2H6) decomposition process was studied by Si2H6 molecular beam mass spectrometry. The decomposition rates obtained on Si(100), Si(111), and SiO2 at 700-degrees-C were about 16%, 9%, and 0%, respectively. These values were almost constant above 700-degrees-C independently from substrate temperatures. SiH3 was found to be generated on Si(111), on the other hand, SiH4 was generated on a Si(100) surface. The difference of the decomposition reactions were interpreted in terms of a dangling bond structure.
引用
收藏
页码：551 / 555
页数：5
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