REACTION OF SI2H6 MOLECULE ON A SILICON SURFACE

被引：7
|
作者：
OHSHITA, Y [1 ]
UESUGI, F [1 ]
NISHIYAMA, I [1 ]
机构：
[1] NEC CORP LTD,OPTOELECTR RES LABS,TSUKUBA,IBARAKI 305,JAPAN
来源：
JOURNAL OF CRYSTAL GROWTH | 1991年 / 115卷 / 1-4期
关键词：
D O I：
10.1016/0022-0248(91)90803-D
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
The disilane (Si2H6) decomposition process was studied by Si2H6 molecular beam mass spectrometry. The decomposition rates obtained on Si(100), Si(111), and SiO2 at 700-degrees-C were about 16%, 9%, and 0%, respectively. These values were almost constant above 700-degrees-C independently from substrate temperatures. SiH3 was found to be generated on Si(111), on the other hand, SiH4 was generated on a Si(100) surface. The difference of the decomposition reactions were interpreted in terms of a dangling bond structure.
引用
收藏
页码：551 / 555
页数：5
相关论文
共 50 条
  • [1] MOLECULAR-BEAM STUDIES OF THE REACTION OF SI2H6 ON SILICON SURFACES
    XIA, LQ
    FURJANIC, MJ
    HANSEN, DA
    ENGSTROM, JR
    ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY, 1993, 205 : 30 - COLL
  • [2] KINETICS AND MECHANICS OF SI2H6 SURFACE DECOMPOSITION ON SI
    KULKARNI, SK
    GATES, SM
    GREENLIEF, CM
    SAWIN, HH
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1990, 8 (03): : 2956 - 2959
  • [3] Dissociative adsorption of Si2H6 on the Si(001) surface
    Çakmak, M
    Srivastava, GP
    PHYSICAL REVIEW B, 2000, 61 (15): : 10216 - 10222
  • [4] Nonadiabatic dynamics of Si(3P)+Si2H6 reaction
    Sun, Bian-Jian
    Jimmy, Chou
    ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY, 2017, 253
  • [5] SURFACE-REACTION FILM FORMATION BY SI2H6 TRANSFER AT MOLECULAR-FLOW
    OHMI, T
    MORITA, M
    TEI, G
    KOCHI, T
    KOSUGI, M
    KUMAGAI, H
    ITOH, M
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1989, 136 (11) : 3455 - 3458
  • [6] DISSOCIATIVE ADSORPTION OF SI2H6 ON SILICON AT HYPERTHERMAL ENERGIES - THE INFLUENCE OF SURFACE-STRUCTURE
    ENGSTROM, JR
    XIA, LQ
    FURJANIC, MJ
    HANSEN, DA
    APPLIED PHYSICS LETTERS, 1993, 63 (13) : 1821 - 1823
  • [7] LOW-TEMPERATURE SILICON EPITAXY USING SI2H6
    MIENO, F
    NAKAMURA, S
    DEGUCHI, T
    MAEDA, M
    INAYOSHI, K
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1987, 134 (09) : 2320 - 2323
  • [8] Saturation adsorption reaction of cracked Si2H6 on Si(001) and Ge(001)
    Suda, Y
    Misato, Y
    Shiratori, D
    Oryu, K
    Yamashita, M
    APPLIED SURFACE SCIENCE, 1998, 130 : 304 - 309
  • [9] Saturation adsorption reaction of cracked Si2H6 on Si(001) and Ge(001)
    Suda, Yoshiyuki
    Misato, Yasuhiro
    Shiratori, Daiju
    Oryu, Katuya
    Yamashita, Mitsutomi
    Applied Surface Science, 1998, 130-132 : 304 - 309
  • [10] NEW DEVICE TO GENERATE SI2H6 FOR AMORPHOUS-SILICON DEPOSITIONS
    DICKSON, CR
    APPLIED PHYSICS LETTERS, 1986, 49 (16) : 1022 - 1024
12345