HEAVY DOPING WITH SN OF GAAS-LAYERS GROWN BY MOLECULAR-BEAM EPITAXY FOR NON-ALLOYED OHMIC CONTACTS

被引：2
|
作者：
LAZNICKA, M
DUNG, PT
OSWALD, J
VORLICEK, V
GREGORA, I
SIMECKOVA, M
JUREK, K
DOUBRAVA, P
机构：
来源：
CZECHOSLOVAK JOURNAL OF PHYSICS | 1988年 / 38卷 / 02期
关键词：
D O I：
10.1007/BF01596499
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
引用
收藏
页码：224 / +
页数：1
相关论文
共 50 条
  • [31] SURFACE DEFECT FORMATION IN GAAS-LAYERS GROWN ON INTENTIONALLY CONTAMINATED SUBSTRATE BY MOLECULAR-BEAM EPITAXY
    WATANABE, N
    FUKUNAGA, T
    KOBAYASHI, KLI
    NAKASHIMA, H
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1985, 24 (07): : L498 - L500
  • [32] THE ELECTRICAL BREAKDOWN PROPERTIES OF GAAS-LAYERS GROWN BY MOLECULAR-BEAM EPITAXY AT LOW-TEMPERATURE
    LUO, JK
    THOMAS, H
    MORGAN, DV
    WESTWOOD, D
    WILLIAMS, RH
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1994, 9 (12) : 2199 - 2204
  • [33] SURFACE MORPHOLOGIES OF GAAS-LAYERS GROWN BY ARSENIC-PRESSURE-CONTROLLED MOLECULAR-BEAM EPITAXY
    WANG, YH
    LIU, WC
    CHANG, CY
    LIAO, SA
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1986, 4 (01): : 30 - 36
  • [34] GROWTH OF HIGH-PURITY GAAS-LAYERS BY MOLECULAR-BEAM EPITAXY
    HWANG, JCM
    TEMKIN, H
    BRENNAN, TM
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (06) : C233 - C233
  • [35] GROWTH OF HIGH-PURITY GAAS-LAYERS BY MOLECULAR-BEAM EPITAXY
    HWANG, JCM
    TEMKIN, H
    BRENNAN, TM
    FRAHM, RE
    APPLIED PHYSICS LETTERS, 1983, 42 (01) : 66 - 68
  • [36] HEAVY CARBON DOPING OF GAAS GROWN BY SOLID-SOURCE MOLECULAR-BEAM EPITAXY
    GIANNINI, C
    FISCHER, A
    LANGE, C
    PLOOG, K
    TAPFER, L
    APPLIED PHYSICS LETTERS, 1992, 61 (02) : 183 - 185
  • [37] NON-ALLOYED OHMIC CONTACTS ON RAPID THERMALLY ZN DIFFUSED GAAS
    KALKUR, TS
    LU, YC
    ARAUJO, CA
    SOLID-STATE ELECTRONICS, 1989, 32 (04) : 281 - 285
  • [38] ISOELECTRONIC DOPING IN GAAS EPILAYERS GROWN BY MOLECULAR-BEAM EPITAXY
    LEE, MK
    CHIU, TH
    DAYEM, A
    AGYEKUM, E
    APPLIED PHYSICS LETTERS, 1988, 53 (26) : 2653 - 2655
  • [39] PHOTOACOUSTIC SIGNALS OF N-TYPE GAAS-LAYERS GROWN BY MOLECULAR-BEAM EPITAXY ON SEMIINSULATING SUBSTRATES
    IKARI, T
    FUKUYAMA, A
    MAEDA, K
    FUTAGAMI, K
    SHIGETOMI, S
    AKASHI, Y
    PHYSICAL REVIEW B, 1992, 46 (16): : 10173 - 10178
  • [40] DEEP STATES AND MISFIT DISLOCATIONS IN INDIUM-DOPED GAAS-LAYERS GROWN BY MOLECULAR-BEAM EPITAXY
    IOANNOU, DE
    HUANG, YJ
    ILIADIS, AA
    APPLIED PHYSICS LETTERS, 1988, 52 (26) : 2258 - 2260
12345