USE OF MICROWAVE TECHNIQUES FOR MEASURING CARRIER LIFETIME AND MOBILITY IN SEMICONDUCTORS

被引：11
|
作者：
BROUSSEAU, M
SCHUTTLER, R
机构：
来源：
SOLID-STATE ELECTRONICS | 1969年 / 12卷 / 05期
关键词：
D O I：
10.1016/0038-1101(69)90099-9
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：417 / +
页数：1
相关论文
共 50 条
  • [1] A High Throughput Approach to Measuring Carrier Mobility and Lifetime of Thin Film Semiconductors
    Mao, S. S.
    Ma, Z. X.
    Oehlerking, L. J.
    Chen, Z. Y.
    Yu, P. Y.
    PHYSICS OF SEMICONDUCTORS: 30TH INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS, 2011, 1399
  • [2] EXPERIMENTAL REQUIREMENTS FOR THE MEASUREMENT OF EXCESS CARRIER LIFETIME IN SEMICONDUCTORS USING MICROWAVE TECHNIQUES
    WANG, MS
    BORREGO, JM
    IEEE TRANSACTIONS ON INSTRUMENTATION AND MEASUREMENT, 1990, 39 (06) : 1054 - 1058
  • [3] PHOTOGENERATED CARRIER COLLECTION IN SEMICONDUCTORS WITH LOW MOBILITY LIFETIME PRODUCTS
    GALLUZZI, F
    JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1985, 18 (04) : 685 - 690
  • [4] Techniques for characterization of charge carrier mobility in organic semiconductors
    Kokil, Akshay
    Yang, Ke
    Kumar, Jayant
    JOURNAL OF POLYMER SCIENCE PART B-POLYMER PHYSICS, 2012, 50 (15) : 1130 - 1144
  • [5] New approach for measuring the microwave Hall mobility of semiconductors
    Murthy, D. V. B.
    Subramanian, V.
    Murthy, V. R. K.
    REVIEW OF SCIENTIFIC INSTRUMENTS, 2006, 77 (06):
  • [6] IMPROVED PHASE SHIFT TECHNIQUE FOR MEASURING SHORT CARRIER LIFETIME IN SEMICONDUCTORS
    HWANG, CJ
    REVIEW OF SCIENTIFIC INSTRUMENTS, 1971, 42 (07): : 1084 - &
  • [7] Controlled microwave module for the noncontact measurement of nonequilibrium carrier lifetime in semiconductors
    Vladimirov V.M.
    Konnov V.G.
    Markov V.V.
    Repin N.S.
    Shepov V.N.
    Russian Microelectronics, 2011, 40 (04) : 293 - 298
  • [8] Carrier Lifetime Measurements in Semiconductors through the Microwave Photoconductivity Decay Method
    Asada, Takato
    Ichikawa, Yoshihito
    Kato, Masashi
    JOVE-JOURNAL OF VISUALIZED EXPERIMENTS, 2019, (146):
  • [9] ON THE MEASUREMENT OF EXCESS CARRIER LIFETIME IN SEMICONDUCTORS BY THE USE OF PENETRATING RADIATION
    HLAVKA, J
    JOURNAL OF APPLIED PHYSICS, 1987, 62 (10) : 4324 - 4325
  • [10] Carrier lifetime in amorphous semiconductors
    1600, American Inst of Physics, Woodbury, NY, USA (75):
12345