共 50 条
- [33] Equilibrium vacancies in Te-doped GaAs studied by positron annihilation DEFECTS IN SEMICONDUCTORS - ICDS-19, PTS 1-3, 1997, 258-2 : 905 - 910
- [35] Equilibrium vacancies in Te-doped GaAs studied by positron annihilation Materials Science Forum, 1997, 258-263 (pt 2): : 905 - 910
- [37] THE DEFECT STRUCTURE OF TE-DOPED GAAS AFTER ZINC DIFFUSION PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS AND MECHANICAL PROPERTIES, 1982, 46 (06): : 915 - 930
- [38] SECONDARY DEFECTS IN QUENCHED ALUMINUM STUDIES BY MOSSBAUER-SPECTROSCOPY JOURNAL OF PHYSICS F-METAL PHYSICS, 1977, 7 (02): : 231 - 242