IMPROVING OF LARGE-AREA GTO HOMOGENEITY BY ELECTRON-IRRADIATION

被引：1
|
作者：
BENDA, V [1 ]
SPUR, P [1 ]
KOJECKY, B [1 ]
机构：
[1] CKD POLOVODICE AS,CS-14000 PRAGUE 4,CZECH REPUBLIC
来源：
MICROELECTRONICS AND RELIABILITY | 1994年 / 34卷 / 01期
关键词：
D O I：
10.1016/0026-2714(94)90472-3
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
For a reliable function of high-power GTOs it is important that individual parallel-connected segments of a GTO structure are nearly of the same characteristics, both static and dynamic. The presented paper deals with the study of electron irradiation influencing the carrier lifetime and decreasing the relative dispersion of the carrier lifetime on the area of power GTO. Theoretical presumptions were experimentally verified by measuring of current gain distribution in large-area GTOs before and after different electron irradiation doses.
引用
收藏
页码：23 / 29
页数：7
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