PIEZOREFLECTANCE OF STRAINED SI/GE SUPERLATTICES GROWN ON GE(001)

被引：6

作者：

YIN, YC ^{[1
]}

YAN, D ^{[1
]}

POLLAK, FH ^{[1
]}

HYBERTSEN, MS ^{[1
]}

VANDENBERG, JM ^{[1
]}

BEAN, JC ^{[1
]}

机构：

[1] AT&T BELL LABS, MURRAY HILL, NJ 07974 USA

来源：

SURFACE SCIENCE | 1992年 / 267卷 / 1-3期

关键词：

D O I：

10.1016/0039-6028(92)91098-V

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

We have studied the piezoreflectance (PzR) and photoreflectance (PR) spectra at 77 K of a series of short-period Si/Ge superlattices grown on Ge(001) substrates. These samples are similar to those measured using electroreflectance (40 K) by Pearsall et al. [Phys. Rev. Lett. 63 (1989) 2104]. We have observed several low-energy features in the PzR data just above the direct band gap of Ge. They are clearly due to quantum-confined direct transitions in the Ge spacer region, not pseudodirect transitions in the short-period Si/Ge portion of the samples as reported by Pearsall et al.

引用

页码：99 / 102

页数：4

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