HIGH-PERFORMANCE, HIGH-RELIABILITY INP/GAINAS P-I-N PHOTODIODES AND FLIP-CHIP INTEGRATED RECEIVERS FOR LIGHTWAVE COMMUNICATIONS

被引：15

作者：

WADA, O ^{[1
]}

MAKIUCHI, M ^{[1
]}

HAMAGUCHI, H ^{[1
]}

KUMAI, T ^{[1
]}

MIKAWA, T ^{[1
]}

机构：

[1] FUJITSU LABS LTD,OPT SEMICOND DEVICES LAB,ATSUGI 24301,JAPAN

来源：

JOURNAL OF LIGHTWAVE TECHNOLOGY | 1991年 / 9卷 / 09期

关键词：

D O I：

10.1109/50.85818

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

InP/GaInAs p-i-n photodiodes suitable for flip-chip integration have been developed for realizing high quantum efficiency, low capacitance, high-speed response, easy fiber alignment, and high reliability. The applicability of flip-chip p-i-n photodiodes to integrated receivers has been shown in the fabrication of a p-i-n amplifier receiver, which has exhibited a sensitivity of -27.4 dBm at 2 Gb/s, NRZ.

引用

页码：1200 / 1207

页数：8

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