ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS WITH HEAVILY C-DOPED BASE LAYERS GROWN BY FLOW-RATE MODULATION EPITAXY

被引：27
|
作者：
MAKIMOTO, T [1 ]
KOBAYASHI, N [1 ]
ITO, H [1 ]
ISHIBASHI, T [1 ]
机构：
[1] NIPPON TELEGRAPH & TEL PUBL CORP, LSI LABS, ATSUGI, KANAGAWA 24301, JAPAN
来源：
APPLIED PHYSICS LETTERS | 1989年 / 54卷 / 01期
关键词：
D O I：
10.1063/1.100827
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：39 / 41
页数：3
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