EFFECT OF MINORITY CARRIER DRAG IN SEMICONDUCTORS WITH NONPARABOLIC DISPERSION LAWS

被引：0

|

作者：

BORBLIK, VL

机构：

来源：

SOVIET PHYSICS SOLID STATE,USSR | 1970年 / 11卷 / 07期

关键词：

D O I：

暂无

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

收藏

页码：1480 / +

页数：1

相关论文

共 50 条

[41] HIGH-FREQUENCY ELECTROMAGNETIC PHENOMENA IN SEMICONDUCTORS WITH NONPARABOLIC DISPERSION LAW OF CHARGE-CARRIERS
BASS, FG
RUBINSHTEIN, EA
FIZIKA TVERDOGO TELA, 1977, 19 (05): : 1379 - 1388
[42] EFFECT OF SIZE QUANTIZATION ON THE EINSTEIN RELATION IN ULTRATHIN FILMS OF NONPARABOLIC SEMICONDUCTORS
CHAKRAVARTI, AN
GHATAK, KP
DHAR, A
GHOSH, KK
GHOSH, S
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1981, 26 (03): : 165 - 169
[43] MAGNON DRAG EFFECT IN MAGNETIC SEMICONDUCTORS
SUGIHARA, K
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1972, 33 (07) : 1365 - &
[44] MINORITY CARRIER LIFETIME IN SEMICONDUCTORS AS A SENSITIVE INDICATOR OF RADIATION DAMAGE
RAPPAPORT, P
PHYSICAL REVIEW, 1954, 94 (05): : 1409 - 1410
[45] MINORITY-CARRIER INJECTION IN RELAXATION SEMICONDUCTORS UNDER ILLUMINATION
POPESCU, C
HENISCH, HK
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1976, 37 (01) : 47 - 49
[46] MINORITY-CARRIER LIFETIME IN III-V SEMICONDUCTORS
AHRENKIEL, RK
MINORITY CARRIERS IN III-V SEMICONDUCTORS: PHYSICS AND APPLICATIONS, 1993, 39 : 39 - 150
[47] METHOD FOR MEASUREMENT OF SHORT MINORITY CARRIER DIFFUSION LENGTHS IN SEMICONDUCTORS
GOODMAN, AM
JOURNAL OF APPLIED PHYSICS, 1961, 32 (12) : 2550 - &
[48] OPTICAL BEAM INDUCED MINORITY-CARRIER DISTRIBUTION IN SEMICONDUCTORS
WILSON, T
PESTER, PD
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1986, 97 (01): : 323 - 329
[49] MINORITY-CARRIER TRAPPING AND LUMINESCENCE TIME RESPONSE OF SEMICONDUCTORS
DISHMAN, JM
PHYSICAL REVIEW B, 1972, 6 (04): : 1337 - &
[50] MINORITY-CARRIER TRANSPORT IN III-V SEMICONDUCTORS
LUNDSTROM, MS
MINORITY CARRIERS IN III-V SEMICONDUCTORS: PHYSICS AND APPLICATIONS, 1993, 39 : 193 - 258

← 1 2 3 4 5 →