EXPERIMENTAL RESEARCH OF ICP REACTOR FOR PLASMA-CHEMICAL ETCHING

被引:0
|
作者
Dudin, S., V [1 ]
Zykov, A., V [1 ]
Dahov, A. N. [2 ]
Farenik, V., I [2 ]
机构
[1] Kharkov Natl Univ, 31 Kurchatov Ave, UA-61108 Kharkov, Ukraine
[2] Sci Ctr Phys Technol, UA-61007 Kharkov, Ukraine
关键词
D O I
暂无
中图分类号
O57 [原子核物理学、高能物理学];
学科分类号
070202 ;
摘要
The results of systematic experimental researches of plasma-chemical etching reactor in the inductive mode are presented in this paper. Measurements of the integral discharge parameters (inductor voltage, gas pressure, input power) have been carried out as well as probe measurements of spatial distribution of local plasma parameters (plasma density, temperature and electron energy distribution function) and radial profiles of ion current to processed surface. The measured dependences differ essentially for atomic (Ar) and molecular (O-2,N-2,CF4) gases. As the range of working pressure covers diffusive and collisionless modes of charged particles movement, radial distribution of ion current density and its absolute value change significantly. Comparison of the obtained results with the calculations executed using "Global" spatially averaged model and 2D-fluid model is carried out.
引用
收藏
页码:189 / 191
页数:3
相关论文
共 50 条
  • [31] CALCULATION OF THE REACTOR PROFILE FOR HOMOGENEOUS PLASMA-CHEMICAL PROCESSES.
    Parkhomenko, V.D.
    Zrazhevskii, V.I.
    Mel'nikov, B.I.
    Soroka, P.I.
    1978, 18 (01): : 126 - 129
  • [32] Plasma-Chemical and Reactive Ion Etching of Gallium Arsenide in Difluorodichloromethane with Helium
    Murin, D.B.
    Chesnokov, I.A.
    Gogulev, I.A.
    Anokhin, A.L.
    Moloskin, A.E.
    Russian Microelectronics, 2024, 53 (04) : 349 - 354
  • [34] APPLICATION OF WARM LANGMUIR PROBE IN THE PLASMA MEASUREMENTS INSIDE PLASMA-CHEMICAL REACTOR
    KALCIK, J
    CZECHOSLOVAK JOURNAL OF PHYSICS, 1995, 45 (03) : 241 - 248
  • [35] The interaction of the supersonic plasma-jet with the substrate in the RF plasma-chemical reactor
    Sicha, M
    Hubicka, Z
    Tichy, M
    Novak, M
    Soukup, L
    Jastrabik, L
    Behnke, JF
    Kapicka, V
    Kapoun, K
    Sery, M
    CONTRIBUTIONS TO PLASMA PHYSICS, 1996, 36 (05) : 605 - 611
  • [37] Semiemprical Estimate of the Temperature of the Medium in the Corona Discharge of a Plasma-Chemical Reactor
    E. A. Bogoslov
    M. P. Danilaev
    S. V. Drobyshev
    V. A. Kuklin
    Journal of Engineering Physics and Thermophysics, 2020, 93 : 1591 - 1597
  • [38] Chromium mask for plasma-chemical etching of AlxGa1 − xN layers
    D. Yu. Protasov
    N. R. Vitsina
    N. A. Valisheva
    F. N. Dul’tsev
    T. V. Malin
    K. S. Zhuravlev
    Technical Physics, 2014, 59 : 1356 - 1359
  • [39] The Formation of a Topological Drawing in a Polycrystalline Diamond Layer by the Plasma-Chemical Etching Method
    Kraynova, Kseniya Y.
    Mishanin, Aleksandr E.
    Pecherskaya, Ekaterina A.
    Shepeleva, Yuliya, V
    2019 20TH INTERNATIONAL CONFERENCE OF YOUNG SPECIALISTS ON MICRO/NANOTECHNOLOGIES AND ELECTRON DEVICES (EDM 2019), 2019, : 44 - 47
  • [40] On formation of a modified volume layer in silicon in plasma-chemical etching by fluorine radicals
    Molchanova, S.A.
    Panov, A.D.
    Poverkhnost Rentgenovskie Sinkhronnye i Nejtronnye Issledovaniya, 1994, (12): : 60 - 68