Electronic and quantum transport properties of a graphene-BN dot-ring hetero-nanostructure

被引:2
|
作者
Seel, Max [1 ]
Pandey, Ravindra [1 ]
机构
[1] Michigan Technol Univ, Dept Phys, Houghton, MI 49931 USA
来源
JOURNAL OF PHYSICS COMMUNICATIONS | 2018年 / 2卷 / 04期
关键词
quantum dot; quantum ring; dot-ring nanostructure; graphene; boron nitride; quantum transport; nanoelectronics;
D O I
10.1088/2399-6528/aab7df
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
Quantum dots, quantum rings, and, most recently, quantum dot-ring nanostructures have been studied for their interesting potential applications in nanoelectronic applications. Here, the electronic properties of a dot-ring hetero-nanostructure consisting of a graphene ring and graphene dot with a hexagonal boron nitride (h-BN) ring serving as barrier between ring and dot are investigated using density functional theory. Analysis of the character of the wave functions near the Fermi level and of the charge distribution of this dot-ring structure and calculations of the quantum transport properties find asymmetry in the conductance resonances leading to asymmetric I-Vcharacteristics which can be modified by applying a negative voltage potential to the central graphene dot.
引用
收藏
页数:9
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