ION-IMPLANTED WAVE-GUIDES IN DOPED LINBO3

被引：11
|
作者：
CHANDLER, PJ
ZHANG, L
TOWSEND, PD
机构：
[1] School of Mathematical and Physical Sciences, University of Sussex, Brighton
来源：
ELECTRONICS LETTERS | 1990年 / 26卷 / 05期
关键词：
Integrated lasers; Ion implantation; Optical waveguides;
D O I：
10.1049/el:19900218
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
It has been shown that the fabrication of optical waveguides in LiNbO3 by ion implantation is not affected by the presence of Nd or Cr in low concentration, or by 5% MgO. These results are compared with those for stoichiometric changes. The implication for integrated laser devices are discussed. © 1990, The Institution of Electrical Engineers. All rights reserved.
引用
收藏
页码：332 / 334
页数：3
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