ION-BEAM SYNTHESIS OF CUBIC FESI2

被引：56
|
作者：
DESIMONI, J [1 ]
BERNAS, H [1 ]
BEHAR, M [1 ]
LIN, XW [1 ]
WASHBURN, J [1 ]
LILIENTALWEBER, Z [1 ]
机构：
[1] LAWRENCE BERKELEY LAB,BERKELEY,CA 94720
来源：
APPLIED PHYSICS LETTERS | 1993年 / 62卷 / 03期
关键词：
D O I：
10.1063/1.108969
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Cubic FeSi2 precipitates were synthesized in Si (100) by room-temperature Fe ion implantation followed by Si 500 keV ion beam induced epitaxial crystallization at 320-degrees-C. High resolution electron microscopy and Rutherford backscattering/channeling techniques show that the cubic precipitates occur in both aligned (A) and twinned (B) types with a lattice parameter very similar to that of the Si ( 100) matrix.
引用
收藏
页码：306 / 308
页数：3
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