HEXAFLUOROACETONE IN RESIST CHEMISTRY

被引：3
|
作者：
PRZYBILLA, KJ
ROSCHERT, H
PAWLOWSKI, G
机构：
[1] Central Research I, Hoechst AG, W-6230 Frankfurt am Main 80
来源：
ADVANCED MATERIALS | 1992年 / 4卷 / 03期
关键词：
D O I：
10.1002/adma.19920040318
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
Photo- and radiation-sensitive materials are used as resists in the fabrication of memory and logic devices. The 64 MB DRAMs, scheduled for 1995, will require feature sizes below 0.5-mu-m (see figure). Deep-UV lithography is a promising method of achieving these targets meaning that new resists with favorable transmission and bleaching characteristics in this spectral region are required.
引用
收藏
页码：239 / 242
页数：4
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