ROLE OF THE NATIVE-OXIDE ON INDIUM-ANTIMONIDE SURFACE-PROPERTIES

被引：4
|
作者：
BARTH, W [1 ]
LILE, D [1 ]
机构：
[1] COLORADO STATE UNIV,DEPT ELECT ENGN,FT COLLINS,CO 80523
来源：
THIN SOLID FILMS | 1993年 / 229卷 / 01期
基金：
美国国家科学基金会;
关键词：
D O I：
10.1016/0040-6090(93)90409-I
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The native oxide was allowed to grow at room temperature on bulk InSb prior to deposition of indirect plasma enhanced chemical vapour deposited silicon dioxide. Capacitance characterization of metal-insulator-semiconductor structure samples showed superior results when contrasted with native oxide-free specimens. Both p-type and n-type InSb samples were studied and surface state densities decreased following oxidation to approximately 3 x 10(11) cm-2 eV-1 while hysteresis decreased significantly. We conclude that preservation of the native oxide is critical for good dielectric-semiconductor interfaces on InSb, especially p-type material.
引用
收藏
页码：54 / 57
页数：4
相关论文
共 50 条
12345