EXPERIMENTAL-EVIDENCE OF 2 SPECIES OF RADIATION-INDUCED TRAPPED POSITIVE CHARGE

被引：39
|
作者：
FREITAG, RK
BROWN, DB
DOZIER, CM
机构：
[1] Naval Research Laboratory, Washington, D.C.
来源：
IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1993年 / 40卷 / 06期
关键词：
D O I：
10.1109/23.273536
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The effects of alternating bias anneals of MOS transistors following either x-irradiation or Fowler-Nordheim Tunneling have been studied. It is found that some of the generated defects can be repeatedly charged and discharged with a change of applied oxide field. Two models to explain this phenomenon are discussed. One assumes a single defect, the E' center. The other model assumes a two defect model. The results of this work are shown to be more consistent with the two defect model.
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页码：1316 / 1322
页数：7
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