EFFECTS OF DEFECT TRAPPING AND SOLUTE SEGREGATION ON DEFECT RECOMBINATION RATES AND VOID SWELLING IN IRRADIATED ALLOYS

被引:11
|
作者
OKAMOTO, PR
LAM, NQ
WIEDERSICH, H
JOHNSON, RA
机构
关键词
D O I
10.1016/0022-3115(78)90352-5
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:821 / 824
页数:4
相关论文
共 50 条
  • [41] DEFECT PRODUCTION IN BI AND DILUTE ALLOYS IRRADIATED BY ELECTRONS
    BEUNEU, F
    BOIS, P
    PHYSICAL REVIEW B, 1988, 37 (11): : 6041 - 6049
  • [42] EFFECT OF SOLUTE ELEMENTS ON VOID FORMATION IN IRRADIATED BINARY NICKEL-ALLOYS
    SHAIKH, MA
    EHRLICH, K
    JOURNAL OF NUCLEAR MATERIALS, 1988, 155 : 1109 - 1112
  • [43] Mechanisms for diffusion of point defect-solute complexes in alloys
    Faulkner, RG
    Song, SH
    Goodwin, CC
    Flewitt, PEJ
    DEFECT AND DIFFUSION FORUM, 1999, 166 : 29 - 42
  • [44] Enhanced recombination suppresses the void swelling in bcc multi-component alloys
    Liu, Qingyuan
    Xia, Songqin
    Su, Yue
    Huang, Jia
    Zhao, Shijun
    Luo, Fengping
    Liu, Haocheng
    Ge, Wei
    Xue, Jianming
    Wang, Chenxu
    Wang, Yugang
    MATERIALIA, 2021, 20
  • [45] VOID SWELLING IN V-ION-IRRADIATED V-O ALLOYS
    AGARWAL, SC
    POTTER, DI
    TAYLOR, A
    TRANSACTIONS OF THE AMERICAN NUCLEAR SOCIETY, 1977, 26 : 184 - 185
  • [46] DEPTH DEPENDENT VOID SWELLING RATES IN SELF-ION IRRADIATED NICKEL
    WHITLEY, JB
    KULCINSKI, GL
    WILKES, P
    BILLEN, J
    JOURNAL OF NUCLEAR MATERIALS, 1979, 85-6 (DEC) : 701 - 706
  • [47] DEFECT INTRODUCTION RATES AND DEFECT IDENTIFICATION STUDIES IN LOW-ENERGY ELECTRON IRRADIATED SILICON
    HEMMENT, PLF
    STEVENS, PRC
    NUCLEAR INSTRUMENTS & METHODS, 1971, 92 (04): : 471 - +
  • [48] THE INFLUENCE OF IMPURITY TRAPPING ON FORMATION AND GROWTH OF DEFECT CLUSTERS IN IRRADIATED MATERIALS
    KATOH, Y
    KOHYAMA, A
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1995, 102 (1-4): : 12 - 18
  • [49] THEORETICAL MODELING OF SOLUTE SEGREGATION TO A FREE-SURFACE IN IRRADIATED DILUTE ALLOYS
    MURPHY, SM
    PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS AND MECHANICAL PROPERTIES, 1989, 59 (05): : 953 - 965
  • [50] Point-defect recombination efficiency at grain boundaries in irradiated SiC
    Moriani, A
    Cleri, F
    PHYSICAL REVIEW B, 2006, 73 (21):