共 50 条
- [33] THEORY OF CURRENT-VOLTAGE CHARACTERISTIC OF HIGH-VOLTAGE P-N-JUNCTIONS AND DEVICES RADIOTEKHNIKA I ELEKTRONIKA, 1977, 22 (02): : 366 - 373
- [35] INFLUENCE OF THE CONCENTRATIONS OF SHALLOW AND DEEP CENTER ON THE CURRENT-VOLTAGE CHARACTERISTIC OF A p-i-n STRUCTURE. Soviet physics. Semiconductors, 1984, 18 (10): : 1173 - 1174
- [36] INFLUENCE OF IMPACT IONIZATION OF TRAPPING LEVELS ON CURRENT-VOLTAGE CHARACTERISTIC OF A DIODE OPERATING UNDER DOUBLE INJECTION CONDITIONS SOVIET PHYSICS SEMICONDUCTORS-USSR, 1970, 3 (07): : 814 - &
- [37] Current-voltage characteristics of n-SiOxNy/n-Si heterojunction diode grown on silicon Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors, 2007, 28 (SUPPL.): : 369 - 371
- [38] THEORY OF CURRENT-VOLTAGE CHARACTERISTICS OF P+-I-N+-STRUCTURE OF A COMPENSATED N-LAYER IN AN AVALANCHE BREAKDOWN REGIME RADIOTEKHNIKA I ELEKTRONIKA, 1975, 20 (07): : 1449 - 1456
- [39] NONLINEAR DISTORTIONS IN P-I-N-DIODE AND LIMITATIONS IN THE AMPLITUDE AND THE FREQUENCY OF THE ALTERNATING-CURRENT FLOWING ACROSS THE DIODE RADIOTEKHNIKA I ELEKTRONIKA, 1987, 32 (12): : 2618 - 2622