CURRENT-VOLTAGE CHARACTERISTIC OF LARGE-AREA SILICON P-I-N-DIODE OPERATING IN TOTAL DEPLETION REGIME

被引：0
|
作者：
KLIMANOV, EA
KULYMANOV, AV
LISEIKIN, VP
YUNGERMAN, VM
机构：
来源：
RADIOTEKHNIKA I ELEKTRONIKA | 1976年 / 21卷 / 09期
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：1967 / 1974
页数：8
相关论文
共 50 条
  • [1] CURRENT-VOLTAGE CHARACTERISTICS OF A P-I-N-DIODE UNDER CONDITIONS OF VERY FAST CARRIER INJECTION
    ABRAMOV, AA
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1983, 17 (11): : 1250 - 1253
  • [2] Instability of current and N-shaped current-voltage characteristic in a silicon p-i-n diode subjected to a magnetic field
    I. K. Kamilov
    K. M. Aliev
    B. G. Aliev
    Kh. O. Ibragimov
    N. S. Abakarova
    Semiconductors, 2007, 41 : 965 - 969
  • [3] Instability of current and N-shaped current-voltage characteristic in a silicon p-i-n diode subjected to a magnetic field
    Kamilov, I. K.
    Aliev, K. M.
    Aliev, B. G.
    Ibragimov, Kh. O.
    Abakarova, N. S.
    SEMICONDUCTORS, 2007, 41 (08) : 965 - 969
  • [4] CURRENT-VOLTAGE CHARACTERISTIC OF A P-I-N STRUCTURE MADE OF COMPENSATED SILICON
    ZOLOTARE.VI
    MUZYUKIN, LP
    MURYGIN, VI
    STAFEEV, VI
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1973, 7 (02): : 262 - 265
  • [5] AVALANCHE BREAKDOWN CURRENT-VOLTAGE CHARACTERISTIC OF A P+-N-N+-DIODE
    PETROV, BK
    RADIOTEKHNIKA I ELEKTRONIKA, 1976, 21 (11): : 2365 - 2376
  • [6] Analytic theory for current-voltage characteristic of a nanowire radial p-i-n diode
    Borblik, V. L.
    SEMICONDUCTOR PHYSICS QUANTUM ELECTRONICS & OPTOELECTRONICS, 2021, 24 (04) : 419 - 424
  • [7] Analytic theory for current-voltage characteristic of a nanowire radial p-i-n diode
    Borblik, V.L.
    Borblik, V.L. (borblik@isp.kiev.ua), 1600, National Academy of Sciences of Ukraine - Institute of Semiconductor Physics (24): : 419 - 424
  • [8] Current-voltage characteristic hysteresis dependence on power supply regime for large area field emitters
    Filippov, S. V.
    Popov, E. O.
    Kolosko, A. G.
    Romanov, P. A.
    Terukov, E. I.
    Ilin, E. S.
    Predtechenskiy, M. R.
    2016 29TH INTERNATIONAL VACUUM NANOELECTRONICS CONFERENCE (IVNC), 2016,
  • [9] CURRENT-VOLTAGE CHARACTERISTIC OF A P-N-JUNCTION
    GORODETSKII, SM
    LAZOVSKII, VV
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1972, 6 (01): : 137 - +
  • [10] CURRENT-VOLTAGE CHARACTERISTIC OF A SILICON P-N-JUNCTION IN THE MICROPLASMA BREAKDOWN REGION
    NAMAYUNAS, AM
    POZHELA, YK
    TAMASHYAVICHYUS, AV
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1987, 21 (04): : 466 - 467
12345