IV AND C-V CHARACTERISTICS OF AU-TIO2 SCHOTTKY DIODES

被引:40
|
作者
SZYDLO, N
POIRIER, R
机构
[1] Laboratoire Central de Recherches, Thomson-CSF, Domaine de Corbeville, 91401 - Orsay, France
关键词
714 Electronic Components and Tubes;
D O I
10.1063/1.328037
中图分类号
O59 [应用物理学];
学科分类号
摘要
14
引用
收藏
页码:3310 / 3312
页数:3
相关论文
共 50 条
  • [21] C-V AND IV CHARACTERISTICS OF QUANTUM-WELL VARACTORS
    SUN, JP
    MAINS, RK
    CHEN, WL
    EAST, JR
    HADDAD, GI
    JOURNAL OF APPLIED PHYSICS, 1992, 72 (06) : 2340 - 2346
  • [22] Electrical Characterization of Graphite/InP Schottky Diodes by I-V-T and C-V Methods
    Tiagulskyi, Stanislav
    Yatskiv, Roman
    Grym, Jan
    JOURNAL OF ELECTRONIC MATERIALS, 2018, 47 (09) : 4950 - 4954
  • [23] REVERSE IV AND C-V CHARACTERISTICS OF SCHOTTKY-BARRIER TYPE DIODES ON ZN DOPED INP EPILAYERS GROWN BY METALORGANIC VAPOR-PHASE EPITAXY
    SINGH, A
    COVA, P
    MASUT, RA
    JOURNAL OF APPLIED PHYSICS, 1994, 76 (04) : 2336 - 2342
  • [25] Electrical characterization of interface states in Ni/n-Si(111) Schottky diodes from (C-V) characteristics
    Sahay, P.P.
    Shamsuddin, M.
    Srivastava, R.S.
    Microelectronics Journal, 1992, 23 (08) : 625 - 632
  • [26] IV AND C-V CHARACTERISTICS OF FERROELECTRIC LEAD GERMANATE ON SILICON
    KRUPANIDHI, SB
    MANSINGH, A
    SAYER, M
    FERROELECTRICS, 1983, 50 (1-4) : 443 - 448
  • [27] On the Frequency C-V and G-V Characteristics of Au/Poly (3-Substituted thiophene) (P3DMTFT)/n-GaAs Schottky Barrier Diodes
    Ozdemir, A. F.
    Akcan, D. E.
    Lapa, H. E.
    Yavuz, A. G.
    Duman, S.
    ACTA PHYSICA POLONICA A, 2015, 128 (2B) : B450 - B454
  • [28] The role of interface states and series resistance on the I-V and C-V characteristics in Al/SnO2/p-Si Schottky diodes
    Altindal, S
    Karadeniz, S
    Tugluoglu, N
    Tataroglu, A
    SOLID-STATE ELECTRONICS, 2003, 47 (10) : 1847 - 1854
  • [29] CHARACTERISTICS OF N-CUINSE2/AU SCHOTTKY DIODES
    PRASAD, JJB
    RAO, DK
    SRIDEVI, D
    MAJHI, J
    REDDY, KV
    SOBHANADRI, J
    SOLID-STATE ELECTRONICS, 1985, 28 (12) : 1251 - 1254
  • [30] The photo C-V characteristics of the Au/GeO2/Ge MOS capacitor
    Oishi, K
    Matsuo, Y
    PHYSICS OF LOW-DIMENSIONAL STRUCTURES, 1997, 8-9 : 73 - 80