NEW COMPOUNDS WITH MOSI2 STRUCTURE

被引:0
|
作者
KUZMA, YB
MILYAN, VV
机构
关键词
D O I
暂无
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:760 / 761
页数:2
相关论文
共 50 条
  • [31] Dynamic dislocation behaviour in the intermetallic compounds NiAl, TiAl and MoSi2
    Messerschmidt, U
    Bartsch, M
    Guder, S
    Haussler, D
    Haushalter, R
    Yamaguchi, M
    INTERMETALLICS, 1998, 6 (7-8) : 729 - 733
  • [32] Electronic properties of MoSi2
    Shugani, Mani
    Aynyas, Mahendra
    Sanyal, S. P.
    Rajagopalan, M.
    INDIAN JOURNAL OF PURE & APPLIED PHYSICS, 2013, 51 (09) : 634 - 637
  • [33] FILM PROPERTIES OF MOSI2 AND THEIR APPLICATION TO SELF-ALIGNED MOSI2 GATE MOSFET
    MOCHIZUKI, T
    TSUJIMARU, T
    KASHIWAGI, M
    NISHI, Y
    IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1980, 15 (04) : 496 - 500
  • [34] Morphology and structure of high temperature MoSi2 coating on niobium
    肖来荣
    易丹青
    殷磊
    蔡志刚
    TransactionsofNonferrousMetalsSocietyofChina, 2005, (01) : 18 - 22
  • [35] MoSi2 Prepared by Mechanical Alloying and Analysis of Structure Property
    Zhang, Xiao-hong
    Wang, Zheng-ping
    Qiao, Ying-jie
    PROCEEDINGS OF THE 7TH NATIONAL CONFERENCE ON CHINESE FUNCTIONAL MATERIALS AND APPLICATIONS (2010), VOLS 1-3, 2010, : 590 - +
  • [36] 微波烧结制备MoSi2及SiC/MoSi2纳米复合陶瓷
    刘长虹
    艾云龙
    何文
    宇航材料工艺, 2012, 42 (03) : 54 - 58
  • [37] FILM PROPERTIES OF MOSI2 AND THEIR APPLICATION TO SELF-ALIGNED MOSI2 GATE MOSFET
    MOCHIZUKI, T
    TSUJIMARU, T
    KASHIWAGI, M
    NISHI, Y
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (08) : 1431 - 1435
  • [38] OXIDATION OF MOSI2/TIB2 AND MOSI2/AL2O3 MIXTURES
    MESCHTER, PJ
    SCRIPTA METALLURGICA ET MATERIALIA, 1991, 25 (05): : 1065 - 1069
  • [39] NEW MOS PROCESS USING MOSI2 AS A GATE MATERIAL
    MOCHIZUKI, T
    SHIBATA, K
    INOUE, T
    OHUCHI, K
    JAPANESE JOURNAL OF APPLIED PHYSICS, 1978, 17 : 37 - 42
  • [40] MoSi2 oxidation resistance coatings for Mo5Si3/MoSi2 composites
    Jianhui Yan
    Hongmei Xu
    Houan Zhang
    Siwen Tang
    Rare Metals, 2009, 28 : 418 - 422