共 50 条
- [31] MECHANISM OF DEFECT-FORMATION IN P-TYPE ZINC-SULFIDE ANNEALED IN SULFUR VAPOR ZHURNAL FIZICHESKOI KHIMII, 1980, 54 (02): : 345 - 348
- [32] INFLUENCE OF SURFACE TREATMENT ON PHOTOCONDUCTIVITY SPECTRA OF ZINC-DOPED P-TYPE SI SOVIET PHYSICS SEMICONDUCTORS-USSR, 1974, 8 (03): : 339 - 341
- [36] Germanium- and zinc-doped p-type InAsSb single crystals with a cutoff wavelength of 12.5 μm 1600, JJAP, Tokyo, Japan (39):
- [38] Transport properties of p-type doped hydrogenated amorphous germanium films SURFACES, VACUUM, AND THEIR APPLICATIONS, 1996, (378): : 324 - 327
- [39] Germanium- and zinc-doped p-type InAsSb single crystals with a cutoff wavelength of 12.5 μm JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2000, 39 (5A): : 2520 - 2522
- [40] THERMAL WIDTH OF FORBIDDEN BAND IN HEAVILY DOPED P-TYPE GERMANIUM SOVIET PHYSICS SEMICONDUCTORS-USSR, 1969, 3 (01): : 72 - &