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- [4] INFLUENCE OF ELECTRON-IRRADIATION ON ELECTRICAL-PROPERTIES OF P-TYPE GERMANIUM DOPED WITH ZINC AND MERCURY SOVIET PHYSICS SEMICONDUCTORS-USSR, 1976, 10 (08): : 880 - 881
- [5] PHOTO-RESISTORS MADE OF P-TYPE SILICON COMPENSATED BY RADIATION-DEFECT CENTERS SOVIET PHYSICS SEMICONDUCTORS-USSR, 1976, 10 (12): : 1410 - 1411
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- [9] ELECTRON-IRRADIATION AND ANNEALING OF GOLD-DOPED P-TYPE GERMANIUM SOVIET PHYSICS SEMICONDUCTORS-USSR, 1975, 9 (02): : 249 - 250