共 50 条
- [31] ENHANCED INTERDIFFUSION OF GAAS-ALGAAS INTERFACES FOLLOWING ION-IMPLANTATION AND RAPID THERMAL ANNEALING ION BEAM PROCESSING OF ADVANCED ELECTRONIC MATERIALS, 1989, 147 : 291 - 296
- [32] RAPID THERMAL ANNEALING OF SI1-XGEX LAYERS FORMED BY GERMANIUM ION-IMPLANTATION NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1994, 88 (03): : 247 - 254
- [35] DAMAGE FORMATION AND ANNEALING OF HIGH-ENERGY ION-IMPLANTATION IN SI NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1989, 39 (1-4): : 318 - 329
- [36] ION-IMPLANTATION OF SILICON IN GALLIUM-ARSENIDE - DAMAGE AND ANNEALING CHARACTERIZATIONS NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH, 1983, 209 (MAY): : 737 - 742
- [37] DEEP RADIATION-DAMAGE IN METALS AFTER ION-IMPLANTATION NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1988, 33 (1-4): : 710 - 713
- [38] RADIATION-DAMAGE IN NICKEL AND IRON AFTER ION-IMPLANTATION NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1988, 35 (3-4): : 244 - 246
- [40] ION-IMPLANTATION DAMAGE IN INP NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH, 1983, 209 (MAY): : 761 - 766