DEFECT FORMATION DURING MBE GROWTH OF CDTE (111)

被引：9
|
作者：
SABININA, IV
GUTAKOVSKII, AK
SIDOROV, YG
KUZMIN, VD
机构：
[1] Institute of Semiconductor Physics, Academy of Sciences of the Ussr, Siberian Branch
来源：
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1991年 / 126卷 / 01期
关键词：
D O I：
10.1002/pssa.2211260120
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The nature of microtwins and dislocations in CdTe (111) films grown by MBE on GaAs (001) and CdTe (111) substrates is investigated by transmission electron microscopy. It is shown that the precondition to microtwin creation is the formation of two-dimensional nuclei both, on initial and on stationary stages of epitaxy. The formation of microtwins results in partial dislocation networks in the twinning plane due to the presence of steps on the growth surface. The interaction of partial dislocations results in the creation of threading dislocations. The increasing of twin boundary density will lead to increasing threading dislocations density in CdTe (111) films.
引用
收藏
页码：181 / 188
页数：8
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