SOLUTION GROWN SIC P-N JUNCTIONS

被引：64

作者：

BRANDER, RW

SUTTON, RP

机构：

来源：

关键词：

D O I：

10.1088/0022-3727/2/3/301

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：309 / &

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[31] CARRIER GENERATION AND RECOMBINATION IN P-N JUNCTIONS AND P-N JUNCTION CHARACTERISTICS
SAH, CT
NOYCE, RN
SHOCKLEY, W
PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1957, 45 (09): : 1228 - 1243
[32] ON THE CAPACITIVE CHARACTERISTICS OF P-N JUNCTIONS
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SOVIET PHYSICS-SOLID STATE, 1961, 3 (01): : 148 - 149
[33] Implanted p-n junctions in GaN
Dept. of Mat. Sci. and Engineering, University of Florida, Gainesville, FL 32611, United States
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不详
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Solid-State Electron., 7 (1235-1238):
[34] ON THE DELINEATION OF P-N JUNCTIONS IN SILICON
ILES, PA
COPPEN, PJ
JOURNAL OF APPLIED PHYSICS, 1958, 29 (10) : 1514 - 1514
[35] p-n junctions in molybdenum ditelluride
Bernede, JC
Kettaf, M
Khelil, A
Spiesser, M
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1996, 157 (01): : 205 - 209
[36] ANOMOLOUS RECOMBINATIONS IN P-N JUNCTIONS
BRIENT, SJ
WILSON, CL
BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1970, 15 (03): : 379 - &
[37] MULTIPLICATION IN SILICON P-N JUNCTIONS
MOLL, JL
PHYSICAL REVIEW, 1965, 137 (3A): : A938 - &
[38] CATHODOLUMINESCENCE AT P-N JUNCTIONS IN GAAS
WITTRY, DB
KYSER, DF
JOURNAL OF APPLIED PHYSICS, 1965, 36 (04) : 1387 - &
[39] PHOTOVOLTAIC EFFECT IN P-N JUNCTIONS
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PHYSICAL REVIEW, 1954, 95 (01): : 16 - 21
[40] CURRENT CARRIERS IN P-N JUNCTIONS
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SOVIET PHYSICS-SOLID STATE, 1961, 3 (06): : 1211 - 1219