SILICON-ON-INSULATOR TECHNOLOGY FOR HIGH-TEMPERATURE, SMART-POWER APPLICATIONS

被引：6
|
作者：
KOREC, J
机构：
[1] Daimler-Benz AG, Research Institute Frankfurt, D-60528 Frankfurt
来源：
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1995年 / 29卷 / 1-3期
关键词：
INTEGRATED TECHNOLOGY; METAL-OXIDE-SEMICONDUCTOR STRUCTURES; SEMICONDUCTOR DEVICES; SILICON;
D O I：
10.1016/0921-5107(94)04015-V
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The motivation to develop high-temperature resistant smart-power products and the impact of silicon-on-insulator (SOI) technology are discussed. The electrical and thermal behaviour of devices on SOI-substrates is illustrated, with examples, showing that smart-power integrated circuits can be designed for operation at chip temperatures up to 200 degrees C allowing the use of low-cost packaging techniques at ambient temperatures up to 130 degrees C. Some reliability issues limiting a broader application of smart power devices at high temperatures at the present time are also considered.
引用
收藏
页码：1 / 6
页数：6
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