SILICON-ON-INSULATOR TECHNOLOGY FOR HIGH-TEMPERATURE, SMART-POWER APPLICATIONS

被引：6
|
作者：
KOREC, J
机构：
[1] Daimler-Benz AG, Research Institute Frankfurt, D-60528 Frankfurt
来源：
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1995年 / 29卷 / 1-3期
关键词：
INTEGRATED TECHNOLOGY; METAL-OXIDE-SEMICONDUCTOR STRUCTURES; SEMICONDUCTOR DEVICES; SILICON;
D O I：
10.1016/0921-5107(94)04015-V
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The motivation to develop high-temperature resistant smart-power products and the impact of silicon-on-insulator (SOI) technology are discussed. The electrical and thermal behaviour of devices on SOI-substrates is illustrated, with examples, showing that smart-power integrated circuits can be designed for operation at chip temperatures up to 200 degrees C allowing the use of low-cost packaging techniques at ambient temperatures up to 130 degrees C. Some reliability issues limiting a broader application of smart power devices at high temperatures at the present time are also considered.
引用
收藏
页码：1 / 6
页数：6
相关论文
共 50 条
  • [1] Silicon-on-insulator for high-temperature applications
    Vanhoenacker-Janvier, D.
    El Kaamouchi, M.
    Moussa, M. Si
    IET CIRCUITS DEVICES & SYSTEMS, 2008, 2 (01) : 151 - 157
  • [2] TUNGSTEN METALLIZATION TECHNOLOGY FOR HIGH-TEMPERATURE SILICON-ON-INSULATOR DEVICES
    CHEN, J
    COLINGE, JP
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1995, 29 (1-3): : 18 - 20
  • [3] Silicon-on-Insulator Based High-Temperature Electronics for Automotive Applications
    Huque, M. A.
    Islam, S. K.
    Blalock, B. J.
    Su, C.
    Vijayaraghavan, R.
    Tolbert, L. M.
    2008 IEEE INTERNATIONAL SYMPOSIUM ON INDUSTRIAL ELECTRONICS, VOLS 1-5, 2008, : 1708 - 1713
  • [4] Improved Trench-Based Power Rectifiers for High-Temperature Smart-Power Applications
    Roig, Jaume
    Jordan, Donato
    Desoete, Bart
    Mouhoubi, Samir
    Rinaldi, Angela
    Bauwens, Filip
    Moens, Peter
    Tack, Marnix
    IEEE ELECTRON DEVICE LETTERS, 2009, 30 (12) : 1341 - 1343
  • [5] A high-temperature silicon-on-insulator stress sensor
    Wang, Zheyao
    Tian, Kuo
    Zhou, Youzheng
    Pan, Liyang
    Hu, Chaohong
    Liu, Litian
    JOURNAL OF MICROMECHANICS AND MICROENGINEERING, 2008, 18 (04)
  • [6] Silicon-on-insulator technology and applications
    Colinge, J.-P.
    Revue HF Tijdschrift, 1997, (04): : 5 - 15
  • [7] SILICON-ON-INSULATOR TECHNOLOGY FOR HIGH-TEMPERATURE METAL-OXIDE-SEMICONDUCTOR DEVICES AND CIRCUITS
    FLANDRE, D
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1995, 29 (1-3): : 7 - 12
  • [8] High-Temperature Silicon-on-Insulator Gate Driver for SiC-FET Power Modules
    Valle-Mayorga, Javier
    Gutshall, Caleb P.
    Phan, Khoa M.
    Escorcia-Carranza, Ivonne
    Mantooth, H. Alan
    Reese, Bradley
    Schupbach, Marcelo
    Lostetter, Alex
    IEEE TRANSACTIONS ON POWER ELECTRONICS, 2012, 27 (11) : 4417 - 4424
  • [9] High performance 600 V smart power technology based on thin layer silicon-on-insulator
    Letavic, T
    Arnold, E
    Simpson, M
    Aquino, R
    Bhimnathwala, H
    Egloff, R
    Emmerik, A
    Wong, S
    Mukherjee, S
    ISPSD '97: 1997 IEEE INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS, 1997, : 49 - 52
  • [10] SiC smart power JFET technology for high-temperature applications
    Sankin, I.
    Bondarenko, V.
    Kelley, R.
    Casady, J. B.
    SILICON CARBIDE AND RELATED MATERIALS 2005, PTS 1 AND 2, 2006, 527-529 : 1207 - 1210
12345