NEW SPICE MODEL OF TOTAL BASE RESISTANCE IN BIPOLAR-TRANSISTORS

被引：2
|
作者：
NAIMI, A
BOUCHER, J
ANDREU, D
机构：
[1] Laboratoire d'Electronique (ENSEEIHT), 31071 Toulouse Cedex, 2, Rue Charles Camichel
来源：
SOLID-STATE ELECTRONICS | 1993年 / 36卷 / 04期
关键词：
D O I：
10.1016/0038-1101(93)90277-W
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The principal models of the intrinsic base resistance in single-base-stripe bipolar transistors are compared by means of computer program. A total base resistance model is proposed which includes both intrinsic and extrinsic resistances R(bi) and R(be) respectively. This model can be implemented in PSPICE simulator. Finally, d.c., a.c. and transient analyses are carried out after the implementation of the new model in PSPICE in order to compare it with the initial PSPICE model.
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页码：639 / 641
页数：3
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