TEMPERATURE-DEPENDENCE OF TRANSIENT ELECTRON-RADIATION UPSET IN TTL NAND GATES

被引：1
|
作者：
LEEDY, TF [1 ]
MCLANE, GF [1 ]
GUENZER, GC [1 ]
机构：
[1] USN,RES LAB,WASHINGTON,DC 20375
来源：
IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1981年 / 28卷 / 06期
关键词：
D O I：
10.1109/TNS.1981.4335771
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：4597 / 4605
页数：9
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