RADIATION-INDUCED DEFECT CENTERS IN BONDED AND ETCHBACK SOI MATERIALS

被引：2
|
作者：
WARREN, WL
SCHWANK, JR
SHANEYFELT, MR
FLEETWOOD, DM
WINOKUR, PS
MASZARA, WP
MCKITTERICK, LB
机构：
[1] Sandia National Laboratories, Albuquerque, NM 87185
[2] Allied-Signal Aerospace, Columbia, MD 21405
来源：
MICROELECTRONIC ENGINEERING | 1993年 / 22卷 / 1-4期
关键词：
D O I：
10.1016/0167-9317(93)90194-A
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Defect centers generated in vacuum-ultraviolet and x-ray irradiated bonded and etchback silicon-on-insulator materials have been characterized using electron paramagnetic resonance studies. Three defect centers identified are the classic E(gamma)' center (O3=Si. +Si=O3), the amorphous silicon center (.Si=Si3), typically called the D-center, and a new center that we attribute to a dislodged hydrogen atom that encounters and is trapped at a delocalized spin center.
引用
收藏
页码：387 / 390
页数：4
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