RADIATION-INDUCED DEFECT CENTERS IN BONDED AND ETCHBACK SOI MATERIALS

被引：2

作者：

WARREN, WL

SCHWANK, JR

SHANEYFELT, MR

FLEETWOOD, DM

WINOKUR, PS

MASZARA, WP

MCKITTERICK, LB

机构：

[1] Sandia National Laboratories, Albuquerque, NM 87185

[2] Allied-Signal Aerospace, Columbia, MD 21405

来源：

MICROELECTRONIC ENGINEERING | 1993年 / 22卷 / 1-4期

关键词：

D O I：

10.1016/0167-9317(93)90194-A

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Defect centers generated in vacuum-ultraviolet and x-ray irradiated bonded and etchback silicon-on-insulator materials have been characterized using electron paramagnetic resonance studies. Three defect centers identified are the classic E(gamma)' center (O3=Si. +Si=O3), the amorphous silicon center (.Si=Si3), typically called the D-center, and a new center that we attribute to a dislodged hydrogen atom that encounters and is trapped at a delocalized spin center.

引用

页码：387 / 390

页数：4

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