P-TYPE DOPING EFFECTS ON BAND-GAP ENERGY FOR GA0.5IN0.5P GROWN BY METALORGANIC VAPOR-PHASE EPITAXY

被引：57
|
作者：
SUZUKI, T
GOMYO, A
HINO, I
KOBAYASHI, K
KAWATA, S
IIJIMA, S
机构：
[1] NEC CORP, DIV COMPOUND SEMICOND DEVICE, MIYAMAE KU, KAWASAKI, KANAGAWA 213, JAPAN
[2] NEC CORP, FUNDAMENTAL RES LABS, MIYAMAE KU, KAWASAKI, KANAGAWA 213, JAPAN
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1988年 / 27卷 / 08期
关键词：
D O I：
10.1143/JJAP.27.L1549
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：L1549 / L1552
页数：4
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