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- [23] DETERMINATION OF MINORITY CHARGE-CARRIER LIFETIME IN NON-LATTICE-MATCHED MOVPE-GROWN GAAS1-XPX/ALYGA1-YAS DOUBLE HETEROSTRUCTURES GALLIUM ARSENIDE AND RELATED COMPOUNDS 1993, 1994, 136 (136): : 397 - 402
- [28] Measuring the Minority-Carrier Diffusion Length of n-Type In0.53Ga0.47As Epilayers Using Surface Photovoltage Journal of Electronic Materials, 2017, 46 : 2061 - 2066
- [30] Improved crystallinity and polarity manipulation of MOVPE-grown GaN epilayers with deep sapphire-nitridation followed by Al-preflow at high temperatures 5TH INTERNATIONAL CONFERENCE ON NITRIDE SEMICONDUCTORS (ICNS-5), PROCEEDINGS, 2003, 0 (07): : 2570 - 2574