CHARACTERIZATION OF ELECTRODEPOSITED AMORPHOUS-SILICON

被引：0

作者：

ROSE, TL ^{[1
]}

NATWIG, DL ^{[1
]}

RAUH, RD ^{[1
]}

机构：

[1] EIC CORP,NEWTON,MA 02158

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1980年 / 127卷 / 08期

关键词：

D O I：

暂无

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：C401 / C401

页数：1

共 50 条

[21] AMORPHOUS-SILICON PHOTOTRANSISTORS
KANEKO, Y
KOIKE, N
TSUTSUI, K
TSUKADA, T
APPLIED PHYSICS LETTERS, 1990, 56 (07) : 650 - 652
[22] CRYSTALLIZATION IN AMORPHOUS-SILICON
ZELLAMA, K
GERMAIN, P
SQUELARD, S
BOURGOIN, JC
THOMAS, PA
JOURNAL OF APPLIED PHYSICS, 1979, 50 (11) : 6995 - 7000
[23] HYDROGEN IN AMORPHOUS-SILICON
PEERCY, PS
NUCLEAR INSTRUMENTS & METHODS, 1981, 182 (APR): : 337 - 349
[24] DOPING OF AMORPHOUS-SILICON
GOLIKOVA, OA
MEZDROGINA, MM
KUDOYAROVA, VK
SEREGIN, PP
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1987, 21 (08): : 889 - 891
[25] AMORPHOUS-SILICON ELECTRONICS
STREET, RA
MRS BULLETIN, 1992, 17 (11) : 70 - 76
[26] AMORPHOUS-SILICON TFT
SUZUKI, K
IKEDA, M
KIKUCHI, M
JAPAN ANNUAL REVIEWS IN ELECTRONICS COMPUTERS & TELECOMMUNICATIONS, 1983, 6 : 252 - 265
[27] ELECTRODEPOSITION OF AMORPHOUS-SILICON
TAKEDA, Y
YAMAMOTO, O
DENKI KAGAKU, 1984, 52 (07): : 460 - 463
[28] KINETICS OF ANNEALING OF DANGLING BONDS IN SPUTTERED AMORPHOUS-SILICON AND HYDROGENATED AMORPHOUS-SILICON
FUJITA, Y
YAMAGUCHI, M
MORIGAKI, K
PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1994, 69 (01): : 57 - 67
[29] PHOTOTHERMAL MODULATION SPECTROSCOPY OF MULTILAYERED STRUCTURES OF AMORPHOUS-SILICON AND AMORPHOUS-SILICON CARBIDE
HATTORI, K
MORI, T
OKAMOTO, H
HAMAKAWA, Y
PHYSICAL REVIEW LETTERS, 1988, 60 (09) : 825 - 827
[30] AMORPHOUS-SILICON AMORPHOUS-SILICON CARBIDE HETEROJUNCTIONS APPLIED TO MEMORY DEVICE STRUCTURES
SAKATA, I
YAMANAKA, M
NAGAI, K
SEKIGAWA, T
HAYASHI, Y
ELECTRONICS LETTERS, 1994, 30 (09) : 688 - 689

← 1 2 3 4 5 →