AUGER ANALYSIS OF NI/AU/TE AND AU/TE OHMIC CONTACTS ON N-GAAS

被引:2
|
作者
BENDER, H
WUYTS, K
WATTE, J
SILVERANS, RE
机构
[1] KATHOLIEKE UNIV LEUVEN,DEPT PHYS,INST KERN STRALINGSFYS,B-3001 LOUVAIN,BELGIUM
[2] KATHOLIEKE UNIV LEUVEN,DEPT PHYS,VASTE STOF FYS MAGNITISME,B-3001 LOUVAIN,BELGIUM
关键词
D O I
10.1002/sia.740190160
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
The characterization of Ni/Au/Te and Au/Te contacts on n-GaAs by Auger electron spectroscopy is studied by surface element mapping and depth profiling. Owing to the high lateral resolution of AES, important characteristics of these metallization schemes, which could not be detected by any other technique, are revealed. Comparison with other analysis techniques is performed, yielding important insight into the mechanism of ohmic conductivity.
引用
收藏
页码:318 / 324
页数:7
相关论文
共 50 条
  • [42] On the low resistance Au/Ge/Pd ohmic contact to n-GaAs
    Hao, PH
    Wang, LC
    Deng, F
    Lau, SS
    Cheng, JY
    JOURNAL OF APPLIED PHYSICS, 1996, 79 (08) : 4211 - 4215
  • [43] ELECTRON-BEAM ANNEALED GE-WSI-AU AND GE-NI-WSI-AU HIGH-TEMPERATURE STABLE OHMIC CONTACTS ON N-GAAS
    WURFL, J
    NASSIBIAN, AG
    HARTNAGEL, HL
    LANGFELD, R
    MAURER, C
    INTERNATIONAL JOURNAL OF ELECTRONICS, 1989, 66 (02) : 213 - 225
  • [44] A I-129 MOSSBAUER INVESTIGATION OF THE OHMIC CONTACT FORMATION MECHANISM IN THE AU/TE/AU/N-GAAS SYSTEM, QUESTIONED AND CONFIRMED BY X-RAY-ANALYSIS AND RAMAN-SPECTROSCOPY
    WUYTS, K
    WATTE, J
    VANDERSTRAETEN, H
    PATTYN, H
    LANGOUCHE, G
    SILVERANS, RE
    MUNDER, H
    BERGER, MG
    LUTH, H
    ZEGBE, G
    JUMAS, JC
    VANHOVE, M
    BENDER, H
    BORGHS, G
    VANROSSUM, M
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1992, 63 (1-2): : 141 - 146
  • [45] Au/In/Pd/Te/Pd ohmic contact to n-GaSb
    Yang, ZC
    Hao, PH
    Wang, LC
    ELECTRONICS LETTERS, 1996, 32 (25) : 2348 - 2349
  • [46] SELECTIVE FORMATION OF OHMIC CONTACTS TO N-GAAS
    YAMANE, Y
    TAKAHASHI, Y
    ISHII, H
    HIRAYAMA, M
    ELECTRONICS LETTERS, 1987, 23 (08) : 382 - 383
  • [47] Electrical and structural properties of refractory metal multilayer Au/Ti/W/Ti ohmic contacts to n-GaAs
    Zhou, J
    Xia, GQ
    Li, BH
    Liu, WC
    Wu, BH
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2003, 42 (5A): : 2609 - 2611
  • [48] EVALUATION OF NI-IN-NI MULTILAYERS FOR THERMALLY STABLE OHMIC CONTACTS TO N-GAAS
    HSIA, ST
    LEE, CP
    HWANG, HL
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1995, 33 (2-3): : 178 - 181
  • [49] The Role of Ni in the Formation of Low Resistance Ni–Ge–Au Ohmic Contacts to n+ GaAs Heterostructures
    Nancy E. Lumpkin
    Gregory R. Lumpkin
    Mark G. Blackford
    Journal of Materials Research, 1999, 14
  • [50] VERY STABLE GE/AU/CR/AU OHMIC CONTACTS TO GAAS
    WILLER, J
    RISTOW, D
    KELLNER, W
    OPPOLZER, H
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1988, 135 (01) : 179 - 181