EPITAXIAL-GROWTH OF NBN ON AN ULTRATHIN MGO SEMICONDUCTOR SYSTEM

被引：46
|
作者：
TONOUCHI, M
SAKAGUCHI, Y
KOBAYASHI, T
机构：
来源：
JOURNAL OF APPLIED PHYSICS | 1987年 / 62卷 / 03期
关键词：
D O I：
10.1063/1.339708
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：961 / 966
页数：6
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